Journal article
Betavoltaic cell based on Ni/beta-Ga2O3 and Ni-63 source
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Publication Details
Author list: Yakimov EB, Polyakov AY, Pearton SJ
Publisher: American Vacuum Society
Place: MELVILLE
Publication year: 2022
Volume number: 40
Issue number: 1
ISSN: 0734-2101
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Abstract
The parameters of betavoltaic cells based on a Ni/beta-Ga2O3 Schottky barrier diode and beta-particle source containing Ni-63 are evaluated. Monte Carlo simulation is used to calculate the depth-dependent generation rate of excess carriers produced by beta-radiation from Ni-63 source. It is shown that the dependence can be described by the exponential function exp(-z/z(0)) with z(0) equal to 1.3 mu m. The short circuit current, open circuit voltage, and maximum power are calculated for the Schottky barrier with parameters obtained from the electron beam induced current studies of Ni Schottky barriers formed on n-type beta-Ga2O3.

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Last updated on 2021-28-12 at 00:54