Journal article
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Times Cited: 82

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NATURE NANOTECHNOLOGY
Publication Details
Author list: Bandurin DA, Tyurnina AV, Yu GL, Mishchenko A, Zolyomi V, Morozov SV, Kumar RK, Gorbachev RV, Kudrynskyi ZR, Pezzini S, Kovalyuk ZD, Zeitler U, Novoselov KS, Patane A, Eaves L, Grigorieva IV, Fal'ko VI, Geim AK, Cao Y, Cao Y
Publisher: Nature Publishing Group
Place: LONDON
Publication year: 2017
Volume number: 12
Issue number: 3
Start page: 223
End page: +
ISSN: 1748-3387
eISSN: 1748-3395
View additional information: View in Web of Science™

Abstract
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound(1,2). These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes(3,4). Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 10(3) cm(2) V-1 s(-1) and 10(4) cm(2) V-1 s(-1) at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides(5-7) and black phosphorus(8-11).

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Last updated on 2018-17-11 at 00:04